QS5U13TR
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- Mfr.Part #
- QS5U13TR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-23-5 Thin, TSOT-23-5
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 2A TSMT5
- Stock
- 33,683
- In Stock ：
- 33,683
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Turn-Off Delay Time :
- 21 ns
- Package / Case :
- SOT-23-5 Thin, TSOT-23-5
- FET Feature :
- Schottky Diode (Isolated)
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation-Max :
- 1.25W Ta
- Fall Time (Typ) :
- 10 ns
- Drain to Source Breakdown Voltage :
- 30V
- Rise Time :
- 10ns
- Gate Charge (Qg) (Max) @ Vgs :
- 3.9nC @ 4.5V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Vgs(th) (Max) @ Id :
- 1.5V @ 1mA
- Drain Current-Max (Abs) (ID) :
- 2A
- Current Rating :
- 2A
- Gate to Source Voltage (Vgs) :
- 12V
- Operating Mode :
- ENHANCEMENT MODE
- Pin Count :
- 5
- Voltage - Rated DC :
- 30V
- Mount :
- Surface Mount
- Number of Pins :
- 5
- Terminal Form :
- Gull wing
- Turn On Delay Time :
- 8 ns
- JESD-609 Code :
- e1
- Factory Lead Time :
- 20 Weeks
- Vgs (Max) :
- ±12V
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 2A Ta
- Number of Elements :
- 1
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 5
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 2A, 4.5V
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 900mW
- Published :
- 2006
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 175pF @ 10V
- FET Type :
- N-Channel
- Terminal Position :
- Dual
- Continuous Drain Current (ID) :
- 2A
- Datasheets
- QS5U13TR
N-Channel Tape & Reel (TR) 100m Ω @ 2A, 4.5V ±12V 175pF @ 10V 3.9nC @ 4.5V SOT-23-5 Thin, TSOT-23-5
QS5U13TR Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 175pF @ 10V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 2A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Drain current refers to the maximum continuous current a device can conduct, and it is 2A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 21 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 12V to 1.Using drive voltage (2.5V 4.5V), this device contributes to a reduction in overall power consumption.
QS5U13TR Features
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 21 ns
QS5U13TR Applications
There are a lot of ROHM Semiconductor
QS5U13TR applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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