QS5U33TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

20 Weeks

Drain to Source Breakdown Voltage :

-30V

Pin Count :

5

Transistor Element Material :

SILICON

Dual Supply Voltage :

-30V

Current - Continuous Drain (Id) @ 25°C :

2A Ta

Number of Elements :

1

Mounting Type :

Surface Mount

Number of Terminations :

5

Operating Mode :

ENHANCEMENT MODE

Package / Case :

SOT-23-5 Thin, TSOT-23-5

Time@Peak Reflow Temperature-Max (s) :

10

Fall Time (Typ) :

6 ns

Turn-Off Delay Time :

25 ns

Drain Current-Max (Abs) (ID) :

2A

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Single

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Rise Time :

6ns

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

310pF @ 10V

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e1

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Vgs (Max) :

±20V

Termination :

SMD/SMT

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

135m Ω @ 2A, 10V

FET Feature :

Schottky Diode (Isolated)

Terminal Position :

Dual

Pbfree Code :

yes

Number of Pins :

5

Nominal Vgs :

-2.5 V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

1.25W

FET Type :

P-Channel

ECCN Code :

EAR99

Continuous Drain Current (ID) :

2A

Terminal Form :

Gull wing

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

3.4nC @ 5V

Drain to Source Voltage (Vdss) :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Turn On Delay Time :

7 ns

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

1.25W Ta

Published :

2007

Operating Temperature :

150°C TJ

Terminal Finish :

TIN SILVER COPPER