QS5U33TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

2A

Power Dissipation-Max :

1.25W Ta

Operating Temperature :

150°C TJ

FET Feature :

Schottky Diode (Isolated)

Input Capacitance (Ciss) (Max) @ Vds :

310pF @ 10V

Package / Case :

SOT-23-5 Thin, TSOT-23-5

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

3.4nC @ 5V

Current - Continuous Drain (Id) @ 25°C :

2A Ta

Vgs (Max) :

±20V

Number of Pins :

5

Element Configuration :

Single

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

10

Terminal Finish :

TIN SILVER COPPER

Peak Reflow Temperature (Cel) :

260

Drain to Source Breakdown Voltage :

-30V

Pin Count :

5

Rise Time :

6ns

FET Type :

P-Channel

Turn-Off Delay Time :

25 ns

Power Dissipation :

1.25W

Number of Terminations :

5

Factory Lead Time :

20 Weeks

Turn On Delay Time :

7 ns

Nominal Vgs :

-2.5 V

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

6 ns

Drain to Source Voltage (Vdss) :

30V

Radiation Hardening :

No

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

2A

Lead Free :

Lead Free

Termination :

SMD/SMT

JESD-609 Code :

e1

Number of Elements :

1

Published :

2007

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Dual Supply Voltage :

-30V

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

135m Ω @ 2A, 10V

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Pbfree Code :

yes