QS5U17TR
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- Mfr.Part #
- QS5U17TR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-23-5 Thin, TSOT-23-5
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 2A TSMT5
- Stock
- 5,739
- In Stock ：
- 5,739
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 5
- Power Dissipation-Max :
- 900mW Ta
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 2A, 4.5V
- JESD-609 Code :
- e1
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Continuous Drain Current (ID) :
- 2A
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Gate Charge (Qg) (Max) @ Vgs :
- 3.9nC @ 4.5V
- Drain Current-Max (Abs) (ID) :
- 2A
- Vgs (Max) :
- ±12V
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Threshold Voltage :
- 1.5V
- Operating Mode :
- ENHANCEMENT MODE
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Published :
- 2006
- Current - Continuous Drain (Id) @ 25°C :
- 2A Ta
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Terminal Position :
- Dual
- Rise Time :
- 10ns
- Turn On Delay Time :
- 8 ns
- FET Feature :
- Schottky Diode (Isolated)
- Gate to Source Voltage (Vgs) :
- 12V
- Power Dissipation :
- 1.25W
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Number of Pins :
- 5
- Operating Temperature :
- 150°C TJ
- Current Rating :
- 2A
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 5
- Vgs(th) (Max) @ Id :
- 1.5V @ 1mA
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- 30V
- Drain to Source Breakdown Voltage :
- 30V
- Turn-Off Delay Time :
- 21 ns
- FET Type :
- N-Channel
- Terminal Finish :
- TIN SILVER COPPER
- Factory Lead Time :
- 20 Weeks
- Input Capacitance (Ciss) (Max) @ Vds :
- 175pF @ 10V
- Package / Case :
- SOT-23-5 Thin, TSOT-23-5
- Lead Free :
- Lead Free
- Fall Time (Typ) :
- 10 ns
- Datasheets
- QS5U17TR
N-Channel Tape & Reel (TR) 100m Ω @ 2A, 4.5V ±12V 175pF @ 10V 3.9nC @ 4.5V SOT-23-5 Thin, TSOT-23-5
QS5U17TR Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 175pF @ 10V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.There is no drain current on this device since the maximum continuous current it can conduct is 2A.As a result of its turn-off delay time, which is 21 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 8 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 12VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 1.5V.In addition to reducing power consumption, this device uses drive voltage (2.5V 4.5V).
QS5U17TR Features
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 21 ns
a threshold voltage of 1.5V
QS5U17TR Applications
There are a lot of ROHM Semiconductor
QS5U17TR applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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