QS5U28TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

10 ns

Fall Time (Typ) :

16 ns

Drain to Source Voltage (Vdss) :

20V

JESD-609 Code :

e1

Package / Case :

SOT-23-5 Thin, TSOT-23-5

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

10

FET Type :

P-Channel

Number of Pins :

5

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Vgs (Max) :

±12V

Peak Reflow Temperature (Cel) :

260

Width :

1.6mm

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

4.8nC @ 4.5V

Published :

2006

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

2A

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

12V

Factory Lead Time :

20 Weeks

Element Configuration :

Single

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

2A

Current - Continuous Drain (Id) @ 25°C :

2A Ta

Current Rating :

-2A

Number of Terminations :

5

Power Dissipation :

1.25W

Voltage - Rated DC :

-20V

Transistor Application :

SWITCHING

Turn-Off Delay Time :

32 ns

RoHS Status :

ROHS3 Compliant

Terminal Finish :

TIN SILVER COPPER

Input Capacitance (Ciss) (Max) @ Vds :

450pF @ 10V

Length :

2.9mm

Height :

850μm

FET Feature :

Schottky Diode (Isolated)

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Pbfree Code :

yes

Rise Time :

16ns

Vgs(th) (Max) @ Id :

2V @ 1mA

Mount :

Surface Mount

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

125m Ω @ 2A, 4.5V

Pin Count :

5

Number of Elements :

1

Power Dissipation-Max :

1.25W Ta

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

-20V

Operating Temperature :

150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)