QS5U26TR
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- Mfr.Part #
- QS5U26TR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-23-5 Thin, TSOT-23-5
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 1.5A TSMT5
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Pin Count :
- 5
- Package / Case :
- SOT-23-5 Thin, TSOT-23-5
- Transistor Element Material :
- SILICON
- Fall Time (Typ) :
- 10 ns
- Pbfree Code :
- yes
- Mount :
- Surface Mount
- Number of Terminations :
- 5
- Power Dissipation :
- 1.25W
- Gate to Source Voltage (Vgs) :
- 12V
- Rise Time :
- 10ns
- Mounting Type :
- Surface Mount
- FET Type :
- P-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 1.5A Ta
- Operating Temperature :
- 150°C TJ
- Power Dissipation-Max :
- 1.25W Ta
- Packaging :
- Tape and Reel (TR)
- Drain to Source Voltage (Vdss) :
- 20V
- Operating Mode :
- ENHANCEMENT MODE
- Published :
- 2011
- Transistor Application :
- SWITCHING
- Threshold Voltage :
- -2V
- REACH SVHC :
- No SVHC
- Voltage - Rated DC :
- -20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 325pF @ 10V
- Drain-source On Resistance-Max :
- 0.24Ohm
- Terminal Form :
- Gull wing
- Turn-Off Delay Time :
- 35 ns
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 1.5A
- Drain to Source Breakdown Voltage :
- -20V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Current Rating :
- -1.5A
- Number of Elements :
- 1
- Number of Pins :
- 5
- FET Feature :
- Schottky Diode (Isolated)
- ECCN Code :
- EAR99
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Vgs (Max) :
- ±12V
- Lead Free :
- Lead Free
- Gate Charge (Qg) (Max) @ Vgs :
- 4.2nC @ 4.5V
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Radiation Hardening :
- No
- JESD-609 Code :
- e1
- Factory Lead Time :
- 20 Weeks
- Rds On (Max) @ Id, Vgs :
- 200m Ω @ 1.5A, 4.5V
- Turn On Delay Time :
- 10 ns
- Datasheets
- QS5U26TR
P-Channel Tape & Reel (TR) 200m Ω @ 1.5A, 4.5V ±12V 325pF @ 10V 4.2nC @ 4.5V 20V SOT-23-5 Thin, TSOT-23-5
QS5U26TR Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 325pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 1.5A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-20V. And this device has -20V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 35 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 10 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 12V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has -2V threshold voltage. Operating this transistor requires a 20V drain to source voltage (Vdss).By using drive voltage (2.5V 4.5V), this device helps reduce its overall power consumption.
QS5U26TR Features
a continuous drain current (ID) of 1.5A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 35 ns
a threshold voltage of -2V
a 20V drain to source voltage (Vdss)
QS5U26TR Applications
There are a lot of ROHM Semiconductor
QS5U26TR applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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