QS5U26TR
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- Mfr.Part #
- QS5U26TR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-23-5 Thin, TSOT-23-5
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 1.5A TSMT5
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 1.5A Ta
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 35 ns
- Peak Reflow Temperature (Cel) :
- 260
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Package / Case :
- SOT-23-5 Thin, TSOT-23-5
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Power Dissipation-Max :
- 1.25W Ta
- FET Feature :
- Schottky Diode (Isolated)
- Drain to Source Voltage (Vdss) :
- 20V
- REACH SVHC :
- No SVHC
- Gate to Source Voltage (Vgs) :
- 12V
- ECCN Code :
- EAR99
- Published :
- 2011
- Continuous Drain Current (ID) :
- 1.5A
- Terminal Position :
- Dual
- Drain to Source Breakdown Voltage :
- -20V
- Gate Charge (Qg) (Max) @ Vgs :
- 4.2nC @ 4.5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 10 ns
- Rise Time :
- 10ns
- Transistor Application :
- SWITCHING
- Pin Count :
- 5
- FET Type :
- P-Channel
- Number of Elements :
- 1
- Factory Lead Time :
- 20 Weeks
- Pbfree Code :
- yes
- Rds On (Max) @ Id, Vgs :
- 200m Ω @ 1.5A, 4.5V
- Number of Pins :
- 5
- Current Rating :
- -1.5A
- Turn On Delay Time :
- 10 ns
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- 150°C TJ
- Drain-source On Resistance-Max :
- 0.24Ohm
- Number of Terminations :
- 5
- Input Capacitance (Ciss) (Max) @ Vds :
- 325pF @ 10V
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Operating Mode :
- ENHANCEMENT MODE
- Threshold Voltage :
- -2V
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e1
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Power Dissipation :
- 1.25W
- Voltage - Rated DC :
- -20V
- Mounting Type :
- Surface Mount
- Vgs (Max) :
- ±12V
- Datasheets
- QS5U26TR
P-Channel Tape & Reel (TR) 200m Ω @ 1.5A, 4.5V ±12V 325pF @ 10V 4.2nC @ 4.5V 20V SOT-23-5 Thin, TSOT-23-5
QS5U26TR Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 325pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 1.5A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-20V. And this device has -20V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 35 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 10 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 12V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has -2V threshold voltage. Operating this transistor requires a 20V drain to source voltage (Vdss).By using drive voltage (2.5V 4.5V), this device helps reduce its overall power consumption.
QS5U26TR Features
a continuous drain current (ID) of 1.5A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 35 ns
a threshold voltage of -2V
a 20V drain to source voltage (Vdss)
QS5U26TR Applications
There are a lot of ROHM Semiconductor
QS5U26TR applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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