PSMN8R5-100ES
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- Mfr.Part #
- PSMN8R5-100ES
- Manufacturer
- Nexperia
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 1
- Stock
- 35,838
- In Stock ：
- 35,838
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Rds On (Max) @ Id, Vgs :
- 8.5m Ω @ 25A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Avalanche Energy Rating (Eas) :
- 219 mJ
- Packaging :
- Tube
- Published :
- 2012
- FET Type :
- N-Channel
- Number of Terminations :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 5512pF @ 50V
- Drain to Source Breakdown Voltage :
- 100V
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Temperature :
- -55°C~175°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 111nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tj
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Power Dissipation :
- 263W
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Rise Time :
- 35ns
- Case Connection :
- DRAIN
- Pin Count :
- 3
- Mounting Type :
- Through Hole
- Max Dual Supply Voltage :
- 100V
- Lead Free :
- Lead Free
- Pulsed Drain Current-Max (IDM) :
- 429A
- Terminal Position :
- Single
- Continuous Drain Current (ID) :
- 100A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs (Max) :
- ±20V
- Turn On Delay Time :
- 20 ns
- Operating Mode :
- ENHANCEMENT MODE
- Drain-source On Resistance-Max :
- 0.0085Ohm
- Turn-Off Delay Time :
- 87 ns
- Power Dissipation-Max :
- 263W Tc
- Factory Lead Time :
- 20 Weeks
- Surface Mount :
- No
- Fall Time (Typ) :
- 43 ns
- Number of Pins :
- 3
- Datasheets
- PSMN8R5-100ES
N-Channel Tube 8.5m Ω @ 25A, 10V ±20V 5512pF @ 50V 111nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
PSMN8R5-100ESQ Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 219 mJ.A device's maximum input capacitance is 5512pF @ 50V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 100A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=100V, and this device has a drain-to-source breakdown voltage of 100V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 87 ns.Its maximum pulsed drain current is 429A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 20 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 100V, it supports maximum dual supply voltages.This device uses no drive voltage (10V) to reduce its overall power consumption.
PSMN8R5-100ESQ Features
the avalanche energy rating (Eas) is 219 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 87 ns
based on its rated peak drain current 429A.
PSMN8R5-100ESQ Applications
There are a lot of Nexperia USA Inc.
PSMN8R5-100ESQ applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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