PSMN5R0-100ES

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Arrays

Pulsed Drain Current-Max (IDM) :

680A

Drain to Source Breakdown Voltage :

100V

Turn-Off Delay Time :

122 ns

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

9900pF @ 50V

Number of Pins :

3

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Published :

2011

Drain-source On Resistance-Max :

0.005ohm

Terminal Position :

Single

Pin Count :

3

Surface Mount :

No

Fall Time (Typ) :

63 ns

Packaging :

Tube

Continuous Drain Current (ID) :

120A

Power Dissipation :

338W

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Number of Elements :

1

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

5m Ω @ 25A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Max Dual Supply Voltage :

100V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Power Dissipation-Max :

338W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

12 Weeks

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Rise Time :

91ns

Vgs(th) (Max) @ Id :

4V @ 1mA

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

45 ns

Terminal Finish :

Tin (Sn)

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

120A Tc