PSMN5R0-100ES

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Temperature :

-55°C~175°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Breakdown Voltage :

100V

Power Dissipation-Max :

338W Tc

FET Type :

N-Channel

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

Lead Free :

Lead Free

JESD-609 Code :

e3

Terminal Position :

Single

Published :

2011

Fall Time (Typ) :

63 ns

Drain-source On Resistance-Max :

0.005ohm

Vgs(th) (Max) @ Id :

4V @ 1mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Power Dissipation :

338W

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Number of Elements :

1

Turn-Off Delay Time :

122 ns

Mounting Type :

Through Hole

Turn On Delay Time :

45 ns

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

5m Ω @ 25A, 10V

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

9900pF @ 50V

Max Dual Supply Voltage :

100V

Radiation Hardening :

No

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Terminal Finish :

Tin (Sn)

Continuous Drain Current (ID) :

120A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

91ns

Pulsed Drain Current-Max (IDM) :

680A

Surface Mount :

No

Factory Lead Time :

12 Weeks

Pin Count :

3

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3