PSMN2R2-40PS127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Arrays

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

8423pF @ 20V

Drain Current-Max (Abs) (ID) :

100A

FET Type :

N-Channel

JEDEC-95 Code :

TO-220AB

Number of Terminations :

3

Drain to Source Voltage (Vdss) :

40V

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Mounting Type :

Through Hole

Drain-source On Resistance-Max :

0.0021Ohm

Number of Pins :

3

Terminal Finish :

Tin (Sn)

Avalanche Energy Rating (Eas) :

1240 mJ

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

306W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

Number of Elements :

1

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-220-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Case Connection :

DRAIN

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

40V

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Pulsed Drain Current-Max (IDM) :

962A

Surface Mount :

No

Published :

2013

Factory Lead Time :

12 Weeks

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 1mA

Rds On (Max) @ Id, Vgs :

2.1m Ω @ 25A, 10V

Reach Compliance Code :

not_compliant

Vgs (Max) :

±20V

Transistor Element Material :

SILICON