PEMH7,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Transistor Type :

2 NPN - Pre-Biased (Dual)

Max Breakdown Voltage :

50V

Max Collector Current :

100mA

Factory Lead Time :

4 Weeks

RoHS Status :

ROHS3 Compliant

Number of Pins :

6

Resistor - Base (R1) :

4.7k Ω

Power Dissipation :

300mW

Vce Saturation (Max) @ Ib, Ic :

100mV @ 250µA, 5mA

Current - Collector Cutoff (Max) :

1μA

Mount :

Surface Mount

Length :

6.35mm

Published :

2009

Terminal Finish :

Tin (Sn)

Additional Feature :

BUILT-IN BIAS RESISTOR

Collector Emitter Breakdown Voltage :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 1mA 5V

Lead Free :

Lead Free

Max Operating Temperature :

150°C

Width :

6.35mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Termination :

SMD/SMT

Weight :

4.535924g

Polarity :

NPN

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Element Configuration :

Dual

REACH SVHC :

No SVHC

Number of Elements :

2

hFE Min :

200

Package / Case :

SOT-563, SOT-666

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Terminal Form :

Flat

Collector Emitter Voltage (VCEO) :

50V

Min Operating Temperature :

-65°C

Base Part Number :

P*MH7

JESD-609 Code :

e3

Max Power Dissipation :

300mW

Number of Terminations :

6

Pin Count :

6

Height :

6.35mm