PEMH1,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Resistor - Base (R1) :

22k Ω

Operating Supply Voltage :

50V

Collector Emitter Breakdown Voltage :

50V

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Length :

1.7mm

Radiation Hardening :

No

Terminal Form :

Flat

Terminal Finish :

Tin (Sn)

Number of Terminations :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Max Power Dissipation :

300mW

Number of Elements :

2

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Termination :

SMD/SMT

Resistor - Emitter Base (R2) :

22k Ω

Transistor Type :

2 NPN - Pre-Biased (Dual)

Transition Frequency :

230MHz

Factory Lead Time :

4 Weeks

Collector Emitter Voltage (VCEO) :

50V

Emitter Base Voltage (VEBO) :

10V

Packaging :

Tape and Reel (TR)

Max Output Current :

100mA

Polarity :

NPN

hFE Min :

60

Pin Count :

6

Collector Emitter Saturation Voltage :

150mV

REACH SVHC :

No SVHC

Power Dissipation :

300mW

JESD-609 Code :

e3

Lead Free :

Lead Free

Published :

2011

Max Collector Current :

100mA

Current - Collector Cutoff (Max) :

1μA

Max Operating Temperature :

150°C

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 5V

Number of Pins :

6

Base Part Number :

P*MH1

Width :

1.3mm

Weight :

4.535924g

Package / Case :

SOT-563, SOT-666

Mount :

Surface Mount

Element Configuration :

Dual

Height :

600μm

Transistor Application :

SWITCHING

Min Operating Temperature :

-65°C