PEMH11,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

JESD-609 Code :

e3

Max Collector Current :

100mA

Time@Peak Reflow Temperature-Max (s) :

30

Min Operating Temperature :

-65°C

Number of Terminations :

6

Package / Case :

SOT-563, SOT-666

ECCN Code :

EAR99

Termination :

SMD/SMT

Radiation Hardening :

No

Mounting Type :

Surface Mount

Published :

2001

Collector Emitter Breakdown Voltage :

50V

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Resistor - Base (R1) :

10k Ω

Collector Emitter Voltage (VCEO) :

50V

hFE Min :

30

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Width :

6.35mm

Max Power Dissipation :

300mW

Factory Lead Time :

4 Weeks

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Operating Temperature :

150°C

Power Dissipation :

300mW

Polarity :

NPN

Pin Count :

6

Number of Elements :

2

Number of Pins :

6

Transistor Type :

2 NPN - Pre-Biased (Dual)

Mount :

Surface Mount

Current - Collector Cutoff (Max) :

1μA

Length :

6.35mm

Terminal Finish :

Tin (Sn)

Element Configuration :

Dual

Peak Reflow Temperature (Cel) :

260

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Transition Frequency :

230MHz

Packaging :

Tape and Reel (TR)

Max Breakdown Voltage :

50V

Terminal Form :

Flat

Base Part Number :

MH11

Height :

6.35mm

REACH SVHC :

No SVHC

Weight :

4.535924g

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Resistor - Emitter Base (R2) :

10k Ω

Reference Standard :

AEC-Q101