PEMH13,115

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

RoHS Status :

ROHS3 Compliant

Vce Saturation (Max) @ Ib, Ic :

100mV @ 250µA, 5mA

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

2

Current - Collector Cutoff (Max) :

1μA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

SOT-563, SOT-666

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 10

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Transistor Application :

SWITCHING

Published :

2001

Resistor - Base (R1) :

4.7k Ω

Number of Pins :

6

Terminal Form :

Flat

Power Dissipation :

300mW

Surface Mount :

yes

Operating Temperature (Max) :

150°C

Factory Lead Time :

4 Weeks

Pin Count :

6

Transistor Element Material :

SILICON

Voltage - Collector Emitter Breakdown (Max) :

50V

Resistor - Emitter Base (R2) :

47k Ω

Polarity :

NPN

Number of Terminations :

6

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

JESD-609 Code :

e3

ECCN Code :

EAR99

Current - Collector (Ic) (Max) :

100mA

Transistor Type :

2 NPN - Pre-Biased (Dual)

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 5V