PEMH10115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 100mA 5V

Number of Terminations :

6

Power - Max :

300mW

Terminal Finish :

Tin (Sn)

Published :

2011

Base Part Number :

P*MH10

Terminal Form :

Flat

Transistor Element Material :

SILICON

JESD-30 Code :

R-PDSO-F6

Surface Mount :

yes

Factory Lead Time :

4 Weeks

Qualification Status :

Not Qualified

Current - Collector Cutoff (Max) :

1μA

Number of Elements :

2

Resistor - Emitter Base (R2) :

47k Ω

Current - Collector (Ic) (Max) :

100mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Voltage - Collector Emitter Breakdown (Max) :

50V

RoHS Status :

ROHS3 Compliant

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Resistor - Base (R1) :

2.2k Ω

Operating Temperature (Max) :

150°C

Vce Saturation (Max) @ Ib, Ic :

100mV @ 250µA, 5mA

ECCN Code :

EAR99

Package / Case :

SOT-563, SOT-666

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 21.36

Pin Count :

6

Polarity/Channel Type :

NPN

Transistor Type :

2 NPN - Pre-Biased (Dual)

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)