PEMH11,315

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Emitter Base Voltage (VEBO) :

10V

Reference Standard :

AEC-Q101

Number of Elements :

2

Max Collector Current :

100mA

Collector Emitter Breakdown Voltage :

50V

Element Configuration :

Dual

Terminal Form :

Flat

Resistor - Emitter Base (R2) :

10k Ω

Min Operating Temperature :

-65°C

Max Power Dissipation :

300mW

Packaging :

Tape and Reel (TR)

Pin Count :

6

Collector Emitter Voltage (VCEO) :

50V

Radiation Hardening :

No

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Current - Collector Cutoff (Max) :

1μA

Package / Case :

SOT-563, SOT-666

Resistor - Base (R1) :

10k Ω

Number of Pins :

6

Transistor Type :

2 NPN - Pre-Biased (Dual)

Mount :

Surface Mount

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

30

hFE Min :

30

Base Part Number :

MH11

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

300mW

Peak Reflow Temperature (Cel) :

260

Published :

2011

Transition Frequency :

230MHz

Number of Terminations :

6

Polarity :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

4 Weeks

Max Operating Temperature :

150°C