PEMH11,315

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Number of Elements :

2

Number of Terminations :

6

Base Part Number :

MH11

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Current - Collector Cutoff (Max) :

1μA

Reference Standard :

AEC-Q101

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Max Collector Current :

100mA

Terminal Form :

Flat

JESD-609 Code :

e3

Min Operating Temperature :

-65°C

Mount :

Surface Mount

Mounting Type :

Surface Mount

Polarity :

NPN

Number of Pins :

6

Power Dissipation :

300mW

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Transition Frequency :

230MHz

Max Operating Temperature :

150°C

Time@Peak Reflow Temperature-Max (s) :

30

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistor - Emitter Base (R2) :

10k Ω

Collector Emitter Voltage (VCEO) :

50V

Package / Case :

SOT-563, SOT-666

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

hFE Min :

30

Pin Count :

6

Resistor - Base (R1) :

10k Ω

Max Power Dissipation :

300mW

Terminal Finish :

Tin (Sn)

Transistor Type :

2 NPN - Pre-Biased (Dual)

Factory Lead Time :

4 Weeks

Emitter Base Voltage (VEBO) :

10V

Element Configuration :

Dual

Published :

2011

Collector Emitter Breakdown Voltage :

50V