PEMH13,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Polarity :

NPN

Terminal Finish :

Tin (Sn)

Terminal Form :

Flat

Voltage - Collector Emitter Breakdown (Max) :

50V

Number of Terminations :

6

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Resistor - Base (R1) :

4.7k Ω

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

6

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 5V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Collector (Ic) (Max) :

100mA

Number of Elements :

2

Surface Mount :

yes

Transistor Element Material :

SILICON

Package / Case :

SOT-563, SOT-666

Packaging :

Tape and Reel (TR)

Vce Saturation (Max) @ Ib, Ic :

100mV @ 250µA, 5mA

Resistor - Emitter Base (R2) :

47k Ω

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Pins :

6

ECCN Code :

EAR99

Transistor Type :

2 NPN - Pre-Biased (Dual)

Published :

2001

Factory Lead Time :

4 Weeks

Operating Temperature (Max) :

150°C

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 10

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Power Dissipation :

300mW

Current - Collector Cutoff (Max) :

1μA

Qualification Status :

Not Qualified

RoHS Status :

ROHS3 Compliant