PEMH2,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Pin Count :

6

RoHS Status :

ROHS3 Compliant

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO 1

Resistor - Base (R1) :

47k Ω

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 5V

Min Operating Temperature :

-65°C

Terminal Finish :

Tin (Sn)

Max Collector Current :

100mA

Lead Free :

Lead Free

Length :

1.7mm

Emitter Base Voltage (VEBO) :

10V

Terminal Form :

Flat

Package / Case :

SOT-563, SOT-666

Number of Pins :

6

Max Output Current :

100mA

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Resistor - Emitter Base (R2) :

47k Ω

Max Power Dissipation :

300mW

JESD-609 Code :

e3

Transistor Type :

2 NPN - Pre-Biased (Dual)

Collector Emitter Saturation Voltage :

150mV

Element Configuration :

Dual

Width :

1.3mm

Radiation Hardening :

No

Published :

2006

Factory Lead Time :

4 Weeks

Collector Emitter Breakdown Voltage :

50V

Mounting Type :

Surface Mount

Operating Supply Voltage :

50V

Max Operating Temperature :

150°C

Number of Terminations :

6

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Polarity :

NPN

Height :

600μm

Collector Emitter Voltage (VCEO) :

50V

Mount :

Surface Mount

Number of Elements :

2

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

1μA