PEMH2,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Factory Lead Time :

4 Weeks

Emitter Base Voltage (VEBO) :

10V

Current - Collector Cutoff (Max) :

1μA

Radiation Hardening :

No

Number of Terminations :

6

Mount :

Surface Mount

Mounting Type :

Surface Mount

Max Power Dissipation :

300mW

Transistor Type :

2 NPN - Pre-Biased (Dual)

ECCN Code :

EAR99

Published :

2006

Element Configuration :

Dual

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO 1

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Max Collector Current :

100mA

Operating Supply Voltage :

50V

Collector Emitter Voltage (VCEO) :

50V

Package / Case :

SOT-563, SOT-666

Collector Emitter Saturation Voltage :

150mV

Collector Emitter Breakdown Voltage :

50V

Max Output Current :

100mA

Max Operating Temperature :

150°C

Height :

600μm

Length :

1.7mm

Number of Elements :

2

Terminal Finish :

Tin (Sn)

Width :

1.3mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 5V

Resistor - Emitter Base (R2) :

47k Ω

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Flat

Pin Count :

6

Min Operating Temperature :

-65°C

Packaging :

Tape and Reel (TR)

Number of Pins :

6

Resistor - Base (R1) :

47k Ω

Transistor Application :

SWITCHING

Polarity :

NPN