PEMH18,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

100mV @ 500µA, 10mA

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Flat

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

50V

Collector Emitter Breakdown Voltage :

50V

Max Operating Temperature :

150°C

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

30

Number of Elements :

2

Resistor - Emitter Base (R2) :

10k Ω

Element Configuration :

Dual

Max Power Dissipation :

300mW

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Current - Collector Cutoff (Max) :

1μA

Resistor - Base (R1) :

4.7k Ω

Polarity :

NPN, PNP

Published :

2011

Pin Count :

6

Package / Case :

SOT-563, SOT-666

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Factory Lead Time :

4 Weeks

Min Operating Temperature :

-65°C

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 10mA 5V

Number of Terminations :

6

Max Collector Current :

100mA

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 2.1

Number of Pins :

6

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Transistor Type :

2 NPN - Pre-Biased (Dual)