PEMH10115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Transistor Type :

2 NPN - Pre-Biased (Dual)

Qualification Status :

Not Qualified

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 21.36

Package / Case :

SOT-563, SOT-666

Resistor - Emitter Base (R2) :

47k Ω

Polarity/Channel Type :

NPN

Current - Collector (Ic) (Max) :

100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 100mA 5V

Packaging :

Tape and Reel (TR)

Resistor - Base (R1) :

2.2k Ω

Published :

2011

Voltage - Collector Emitter Breakdown (Max) :

50V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Terminal Form :

Flat

ECCN Code :

EAR99

Number of Terminations :

6

Number of Elements :

2

Mounting Type :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

100mV @ 250µA, 5mA

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

JESD-30 Code :

R-PDSO-F6

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Operating Temperature (Max) :

150°C

Factory Lead Time :

4 Weeks

Current - Collector Cutoff (Max) :

1μA

Base Part Number :

P*MH10

Power - Max :

300mW

Pin Count :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)