PEMH10,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector Cutoff (Max) :

1μA

Package / Case :

SOT-563, SOT-666

Power - Max :

300mW

Base Part Number :

P*MH10

Terminal Finish :

Tin (Sn)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-F6

Transistor Element Material :

SILICON

Transistor Type :

2 NPN - Pre-Biased (Dual)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

6

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Current - Collector (Ic) (Max) :

100mA

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Factory Lead Time :

4 Weeks

Terminal Form :

Flat

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Vce Saturation (Max) @ Ib, Ic :

100mV @ 250µA, 5mA

Surface Mount :

yes

Number of Elements :

2

Pin Count :

6

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 100mA 5V

RoHS Status :

ROHS3 Compliant

Voltage - Collector Emitter Breakdown (Max) :

50V

Resistor - Base (R1) :

2.2k Ω

Resistor - Emitter Base (R2) :

47k Ω

Operating Temperature (Max) :

150°C

Published :

2011

Polarity/Channel Type :

NPN

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 21.36

ECCN Code :

EAR99