PEMH11,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Packaging :

Tape and Reel (TR)

Transistor Type :

2 NPN - Pre-Biased (Dual)

Collector Emitter Voltage (VCEO) :

50V

Base Part Number :

MH11

Width :

6.35mm

Pin Count :

6

Number of Pins :

6

Number of Elements :

2

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Power Dissipation :

300mW

Current - Collector Cutoff (Max) :

1μA

Collector Emitter Breakdown Voltage :

50V

Reference Standard :

AEC-Q101

Max Breakdown Voltage :

50V

Radiation Hardening :

No

Weight :

4.535924g

Terminal Form :

Flat

Resistor - Emitter Base (R2) :

10k Ω

Number of Terminations :

6

Factory Lead Time :

4 Weeks

Peak Reflow Temperature (Cel) :

260

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Max Power Dissipation :

300mW

Transition Frequency :

230MHz

Mount :

Surface Mount

JESD-609 Code :

e3

Polarity :

NPN

REACH SVHC :

No SVHC

Published :

2001

Termination :

SMD/SMT

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Transistor Application :

SWITCHING

Min Operating Temperature :

-65°C

Max Operating Temperature :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistor - Base (R1) :

10k Ω

hFE Min :

30

Max Collector Current :

100mA

Length :

6.35mm

Lead Free :

Lead Free

Height :

6.35mm

Terminal Finish :

Tin (Sn)

Element Configuration :

Dual

Package / Case :

SOT-563, SOT-666

Time@Peak Reflow Temperature-Max (s) :

30

Mounting Type :

Surface Mount