PEMH11,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Package / Case :

SOT-563, SOT-666

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Min Operating Temperature :

-65°C

Factory Lead Time :

4 Weeks

Transistor Type :

2 NPN - Pre-Biased (Dual)

Termination :

SMD/SMT

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

50V

Polarity :

NPN

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Collector Emitter Voltage (VCEO) :

50V

Max Breakdown Voltage :

50V

JESD-609 Code :

e3

Published :

2001

Time@Peak Reflow Temperature-Max (s) :

30

Pin Count :

6

Max Operating Temperature :

150°C

Terminal Form :

Flat

Lead Free :

Lead Free

Mount :

Surface Mount

ECCN Code :

EAR99

Height :

6.35mm

Max Power Dissipation :

300mW

Resistor - Emitter Base (R2) :

10k Ω

Element Configuration :

Dual

Reference Standard :

AEC-Q101

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

Weight :

4.535924g

Number of Elements :

2

Number of Terminations :

6

Base Part Number :

MH11

Mounting Type :

Surface Mount

Transition Frequency :

230MHz

Number of Pins :

6

Max Collector Current :

100mA

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Peak Reflow Temperature (Cel) :

260

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Length :

6.35mm

Power Dissipation :

300mW

Packaging :

Tape and Reel (TR)

Current - Collector Cutoff (Max) :

1μA

hFE Min :

30

Resistor - Base (R1) :

10k Ω

Radiation Hardening :

No

Width :

6.35mm