PEMH17,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Collector Emitter Voltage (VCEO) :

50V

Element Configuration :

Dual

Terminal Finish :

Tin (Sn)

Published :

2009

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 0.47

Radiation Hardening :

No

Current - Collector Cutoff (Max) :

1μA

Collector Emitter Breakdown Voltage :

50V

Packaging :

Tape and Reel (TR)

Resistor - Emitter Base (R2) :

22k Ω

Mounting Type :

Surface Mount

Terminal Form :

Flat

JESD-609 Code :

e3

Transistor Type :

2 NPN - Pre-Biased (Dual)

Resistor - Base (R1) :

47k Ω

Package / Case :

SOT-563, SOT-666

Min Operating Temperature :

-65°C

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

300mW

Number of Pins :

6

Number of Terminations :

6

Number of Elements :

2

Max Operating Temperature :

150°C

Polarity :

NPN

Transistor Application :

SWITCHING

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 5V

Pin Count :

6

Max Collector Current :

100mA

Mount :

Surface Mount

Factory Lead Time :

4 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)