PEMH16,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 5V

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Mount :

Surface Mount

Lead Free :

Lead Free

Package / Case :

SOT-563, SOT-666

Max Power Dissipation :

300mW

Max Breakdown Voltage :

50V

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 2.1

Mounting Type :

Surface Mount

Terminal Form :

Flat

Factory Lead Time :

4 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Pin Count :

6

RoHS Status :

ROHS3 Compliant

Resistor - Emitter Base (R2) :

47k Ω

Element Configuration :

Dual

Number of Pins :

6

Resistor - Base (R1) :

22k Ω

Terminal Finish :

Tin (Sn)

Collector Emitter Breakdown Voltage :

50V

Max Operating Temperature :

150°C

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Number of Terminations :

6

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Max Collector Current :

100mA

Collector Emitter Voltage (VCEO) :

50V

Min Operating Temperature :

-65°C

Number of Elements :

2

Transistor Type :

2 NPN - Pre-Biased (Dual)

Polarity :

NPN

Current - Collector Cutoff (Max) :

1μA

Published :

2009