PEMH14,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Packaging :

Tape and Reel (TR)

Terminal Finish :

Tin (Sn)

Number of Elements :

2

Mount :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Collector Emitter Voltage (VCEO) :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Number of Terminations :

6

Pin Count :

6

Number of Pins :

6

Current - Collector Cutoff (Max) :

1μA

Collector Emitter Breakdown Voltage :

50V

Factory Lead Time :

4 Weeks

Resistor - Base (R1) :

47k Ω

Published :

2009

Additional Feature :

BUILT IN BIAS RESISTOR

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA 5V

Max Breakdown Voltage :

50V

Transistor Type :

2 NPN - Pre-Biased (Dual)

ECCN Code :

EAR99

Max Power Dissipation :

300mW

Transistor Application :

SWITCHING

Radiation Hardening :

No

JESD-609 Code :

e3

Max Collector Current :

100mA

Element Configuration :

Dual

Terminal Form :

Flat

Min Operating Temperature :

-65°C

Max Operating Temperature :

150°C

Package / Case :

SOT-563, SOT-666

Polarity :

NPN, PNP