PEMH13,315

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Number of Terminations :

6

Pin Count :

6

Resistor - Emitter Base (R2) :

47k Ω

Collector Emitter Breakdown Voltage :

50V

Radiation Hardening :

No

Transistor Type :

2 NPN - Pre-Biased (Dual)

Vce Saturation (Max) @ Ib, Ic :

100mV @ 250µA, 5mA

Polarity :

NPN

Terminal Form :

Flat

Transistor Application :

SWITCHING

Published :

2011

Factory Lead Time :

4 Weeks

JESD-609 Code :

e3

Max Power Dissipation :

300mW

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 10

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

100mA

Element Configuration :

Dual

Number of Pins :

6

Current - Collector Cutoff (Max) :

1μA

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 5V

Resistor - Base (R1) :

4.7k Ω

Max Operating Temperature :

150°C

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Terminal Finish :

Tin (Sn)

Mounting Type :

Surface Mount

Min Operating Temperature :

-65°C

Collector Emitter Voltage (VCEO) :

50V

Package / Case :

SOT-563, SOT-666

Number of Elements :

2