NTZD3156CT2G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Continuous Drain Current (ID) :

540mA

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.55Ohm

Published :

2008

Lead Free :

Lead Free

Number of Pins :

6

Rise Time :

6.5ns

Drain Current-Max (Abs) (ID) :

0.54A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

20V

Max Power Dissipation :

250mW

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

RoHS Status :

RoHS Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Qualification Status :

Not Qualified

Package / Case :

SOT-563, SOT-666

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 5 days ago)

Input Capacitance (Ciss) (Max) @ Vds :

72pF @ 16V

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

6

Element Configuration :

Dual

Pbfree Code :

yes

Transistor Element Material :

SILICON

Power Dissipation :

280mW

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

2.5nC @ 4.5V

Number of Elements :

2

Terminal Finish :

Tin (Sn)

Pin Count :

6

Fall Time (Typ) :

6.5 ns

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

6V

Current - Continuous Drain (Id) @ 25°C :

540mA 430mA

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

1V @ 250μA

Terminal Form :

Flat

FET Feature :

Logic Level Gate

FET Type :

N and P-Channel

Rds On (Max) @ Id, Vgs :

550m Ω @ 540mA, 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

29 ns