NTZD3154NT1H

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rise Time :

4ns

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

20V

Vgs(th) (Max) @ Id :

1V @ 250μA

JESD-609 Code :

e3

Max Power Dissipation :

250mW

Number of Terminations :

6

Factory Lead Time :

5 Weeks

RoHS Status :

RoHS Compliant

Fall Time (Typ) :

8 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.55Ohm

Number of Elements :

2

Gate Charge (Qg) (Max) @ Vgs :

2.5nC @ 4.5V

Element Configuration :

Dual

Drain Current-Max (Abs) (ID) :

0.54A

Terminal Form :

Flat

Continuous Drain Current (ID) :

540mA

Number of Pins :

6

Rds On (Max) @ Id, Vgs :

550m Ω @ 540mA, 4.5V

Packaging :

Tape and Reel (TR)

FET Type :

2 N-Channel (Dual)

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 16V

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

6 ns

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Tin (Sn)

DS Breakdown Voltage-Min :

20V

Turn-Off Delay Time :

16 ns

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

6V

Published :

2014

FET Feature :

Standard

Feedback Cap-Max (Crss) :

20 pF

Transistor Element Material :

SILICON

Package / Case :

SOT-563, SOT-666

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount