NTZD3155CT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Height :

600μm

Number of Elements :

2

Continuous Drain Current (ID) :

540mA

Drain to Source Voltage (Vdss) :

20V

Base Part Number :

NTZD3155C

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

1V @ 250μA

FET Feature :

Logic Level Gate

FET Type :

N and P-Channel

Gate to Source Voltage (Vgs) :

6V

Terminal Form :

Flat

Max Power Dissipation :

250mW

Fall Time (Typ) :

12 ns

JESD-609 Code :

e3

Contact Plating :

Tin

Element Configuration :

Dual

Threshold Voltage :

1V

Package / Case :

SOT-563, SOT-666

Resistance :

500MOhm

REACH SVHC :

No SVHC

Surface Mount :

yes

Turn-Off Delay Time :

35 ns

Current - Continuous Drain (Id) @ 25°C :

540mA 430mA

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Packaging :

Tape and Reel (TR)

Published :

2007

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Length :

1.7mm

Drain to Source Breakdown Voltage :

-20V

Power Dissipation :

250mW

Current Rating :

540mA

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

6

Factory Lead Time :

12 Weeks

Lead Free :

Lead Free

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Turn On Delay Time :

10 ns

Operating Mode :

ENHANCEMENT MODE

Rise Time :

12ns

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 16V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Pins :

6

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

6

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

0.54A

Transistor Application :

SWITCHING

Width :

1.3mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

550m Ω @ 540mA, 4.5V

Gate Charge (Qg) (Max) @ Vgs :

2.5nC @ 4.5V

Mounting Type :

Surface Mount