NTZD3155CT5G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Form :

Flat

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

540mA 430mA

Power Dissipation :

250mW

Turn-Off Delay Time :

35 ns

FET Feature :

Logic Level Gate

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 16V

Continuous Drain Current (ID) :

540mA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material :

SILICON

FET Type :

N and P-Channel

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 day ago)

Gate Charge (Qg) (Max) @ Vgs :

2.5nC @ 4.5V

Time@Peak Reflow Temperature-Max (s) :

40

Drain Current-Max (Abs) (ID) :

0.54A

Pbfree Code :

yes

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Max Power Dissipation :

250mW

Terminal Finish :

Tin (Sn)

Qualification Status :

Not Qualified

Number of Pins :

6

Base Part Number :

NTZD3155C

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Voltage - Rated DC :

20V

Rise Time :

12ns

Pin Count :

6

Mounting Type :

Surface Mount

Number of Terminations :

6

RoHS Status :

RoHS Compliant

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Package / Case :

SOT-563, SOT-666

Number of Elements :

2

Fall Time (Typ) :

12 ns

Surface Mount :

yes

Vgs(th) (Max) @ Id :

1V @ 250μA

Rds On (Max) @ Id, Vgs :

550m Ω @ 540mA, 4.5V

Drain to Source Breakdown Voltage :

-20V

Current Rating :

540mA

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Published :

2012

Element Configuration :

Dual

Gate to Source Voltage (Vgs) :

6V

ECCN Code :

EAR99

Resistance :

550mOhm