NTZD3155CT1H

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Power Dissipation :

250mW

Weight :

8.193012mg

Continuous Drain Current (ID) :

430mA

Packaging :

Tape and Reel (TR)

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Factory Lead Time :

26 Weeks

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

FET Feature :

Standard

Transistor Element Material :

SILICON

Package / Case :

SOT-563, SOT-666

Drain Current-Max (Abs) (ID) :

0.54A

Vgs(th) (Max) @ Id :

1V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

FET Type :

N and P-Channel

Rds On (Max) @ Id, Vgs :

550m Ω @ 540mA, 4.5V

Drain to Source Voltage (Vdss) :

20V

Gate to Source Voltage (Vgs) :

6V

Gate Charge (Qg) (Max) @ Vgs :

2.5nC @ 4.5V

Operating Temperature :

-55°C~150°C TJ

Published :

2007

Surface Mount :

yes

Number of Elements :

2

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 16V

Terminal Form :

Flat

Number of Terminations :

6

Number of Pins :

6

Drain-source On Resistance-Max :

0.55Ohm

Element Configuration :

Dual

ECCN Code :

EAR99

RoHS Status :

RoHS Compliant

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

540mA 430mA

Number of Channels :

2