NTZD3152PT5G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Peak Reflow Temperature (Cel) :

260

Drain-source On Resistance-Max :

0.9Ohm

Current Rating :

-430mA

Element Configuration :

Dual

Continuous Drain Current (ID) :

430mA

Base Part Number :

NTZD3152P

Published :

2006

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

-20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

-20V

Pin Count :

6

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Fall Time (Typ) :

12 ns

Rise Time :

12ns

Vgs(th) (Max) @ Id :

1V @ 250μA

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

175pF @ 16V

Drain to Source Voltage (Vdss) :

20V

Feedback Cap-Max (Crss) :

20 pF

Operating Temperature :

-55°C~150°C TJ

Qualification Status :

Not Qualified

Terminal Form :

Flat

Gate Charge (Qg) (Max) @ Vgs :

2.5nC @ 4.5V

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

0.43A

Power Dissipation :

250mW

Terminal Finish :

Tin (Sn)

FET Feature :

Standard

JESD-609 Code :

e3

Number of Pins :

6

Gate to Source Voltage (Vgs) :

6V

Number of Terminations :

6

Max Power Dissipation :

250mW

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Element Material :

SILICON

Number of Elements :

2

Turn-Off Delay Time :

35 ns

Lead Free :

Lead Free

RoHS Status :

RoHS Compliant

Additional Feature :

ESD PROTECTION, LOW THRESHOLD

FET Type :

2 P-Channel (Dual)

Operating Mode :

ENHANCEMENT MODE

Package / Case :

SOT-563, SOT-666

Rds On (Max) @ Id, Vgs :

900m Ω @ 430mA, 4.5V