NTZD3152PT5G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Flat

Gate Charge (Qg) (Max) @ Vgs :

2.5nC @ 4.5V

Lead Free :

Lead Free

Published :

2006

Max Power Dissipation :

250mW

FET Type :

2 P-Channel (Dual)

Drain Current-Max (Abs) (ID) :

0.43A

Vgs(th) (Max) @ Id :

1V @ 250μA

Turn-Off Delay Time :

35 ns

Mount :

Surface Mount

Continuous Drain Current (ID) :

430mA

Number of Terminations :

6

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

900m Ω @ 430mA, 4.5V

Gate to Source Voltage (Vgs) :

6V

Terminal Finish :

Tin (Sn)

Rise Time :

12ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain-source On Resistance-Max :

0.9Ohm

Package / Case :

SOT-563, SOT-666

FET Feature :

Standard

Drain to Source Breakdown Voltage :

-20V

Fall Time (Typ) :

12 ns

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

20V

Current Rating :

-430mA

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation :

250mW

Element Configuration :

Dual

Peak Reflow Temperature (Cel) :

260

Voltage - Rated DC :

-20V

JESD-609 Code :

e3

Feedback Cap-Max (Crss) :

20 pF

Pin Count :

6

Additional Feature :

ESD PROTECTION, LOW THRESHOLD

RoHS Status :

RoHS Compliant

Base Part Number :

NTZD3152P

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Number of Pins :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

175pF @ 16V

Number of Elements :

2

Transistor Application :

SWITCHING