NTZD3152PT1H

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

6V

Fall Time (Typ) :

19 ns

Weight :

8.193012mg

Published :

2006

Pin Count :

6

Packaging :

Tape and Reel (TR)

FET Type :

2 P-Channel (Dual)

JESD-609 Code :

e3

Element Configuration :

Dual

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Pbfree Code :

yes

Max Power Dissipation :

250mW

Rds On (Max) @ Id, Vgs :

900m Ω @ 430mA, 4.5V

Continuous Drain Current (ID) :

430mA

Terminal Finish :

Tin (Sn)

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

175pF @ 16V

Drain-source On Resistance-Max :

0.9Ohm

ECCN Code :

EAR99

Rise Time :

12ns

Number of Pins :

6

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Feature :

Standard

Terminal Form :

Flat

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

20V

Turn On Delay Time :

10 ns

Power Dissipation :

280mW

Gate Charge (Qg) (Max) @ Vgs :

2.5nC @ 4.5V

Package / Case :

SOT-563, SOT-666

RoHS Status :

RoHS Compliant

Additional Feature :

ESD PROTECTION, LOW THRESHOLD

Vgs(th) (Max) @ Id :

1V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

Factory Lead Time :

15 Weeks

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

6

Drain Current-Max (Abs) (ID) :

0.43A

Turn-Off Delay Time :

35 ns