NTZD3155CT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Vgs(th) (Max) @ Id :

1V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Rise Time :

12ns

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

540mA 430mA

Base Part Number :

NTZD3155C

Factory Lead Time :

12 Weeks

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 16V

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

550m Ω @ 540mA, 4.5V

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

6V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

35 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Surface Mount

Threshold Voltage :

1V

Published :

2007

Pbfree Code :

yes

Max Power Dissipation :

250mW

Drain to Source Breakdown Voltage :

-20V

Resistance :

500MOhm

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

2.5nC @ 4.5V

ECCN Code :

EAR99

Turn On Delay Time :

10 ns

RoHS Status :

ROHS3 Compliant

FET Type :

N and P-Channel

Continuous Drain Current (ID) :

540mA

FET Feature :

Logic Level Gate

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

0.54A

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Pin Count :

6

Fall Time (Typ) :

12 ns

Number of Elements :

2

Length :

1.7mm

Lead Free :

Lead Free

Width :

1.3mm

Current Rating :

540mA

Number of Pins :

6

Packaging :

Tape and Reel (TR)

Element Configuration :

Dual

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation :

250mW

Height :

600μm

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

6

Drain to Source Voltage (Vdss) :

20V

Terminal Form :

Flat

Package / Case :

SOT-563, SOT-666

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Contact Plating :

Tin