NTZD3152PT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Package / Case :

SOT-563, SOT-666

Rds On (Max) @ Id, Vgs :

900m Ω @ 430mA, 4.5V

Drain Current-Max (Abs) (ID) :

0.43A

Mounting Type :

Surface Mount

Length :

1.7mm

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Max Power Dissipation :

250mW

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Tape and Reel (TR)

Base Part Number :

NTZD3152P

Fall Time (Typ) :

12 ns

Rise Time :

12ns

FET Feature :

Standard

Current Rating :

-430mA

Lead Free :

Lead Free

Surface Mount :

yes

Vgs(th) (Max) @ Id :

1V @ 250μA

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Dual

Additional Feature :

ESD PROTECTION, LOW THRESHOLD

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

-20V

Turn-Off Delay Time :

35 ns

Turn On Delay Time :

10 ns

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

2.5nC @ 4.5V

Number of Pins :

6

JESD-609 Code :

e3

Continuous Drain Current (ID) :

430mA

Width :

1.3mm

Pin Count :

6

Height :

600μm

Pbfree Code :

yes

Resistance :

500MOhm

Voltage - Rated DC :

-20V

Terminal Form :

Flat

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2003

Gate to Source Voltage (Vgs) :

6V

Terminal Finish :

Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

175pF @ 16V

Number of Terminations :

6

FET Type :

2 P-Channel (Dual)

Radiation Hardening :

No

Power Dissipation :

250mW

Peak Reflow Temperature (Cel) :

260

Number of Elements :

2

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Drain to Source Voltage (Vdss) :

20V

Factory Lead Time :

10 Weeks