NTLJD3119CTAG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Power Dissipation :

710mW

JESD-609 Code :

e3

FET Feature :

Logic Level Gate

Package / Case :

6-WDFN Exposed Pad

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

-20V

Continuous Drain Current (ID) :

4.6A

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

1V @ 250μA

Drain Current-Max (Abs) (ID) :

3.8A

ECCN Code :

EAR99

Number of Terminations :

6

Current - Continuous Drain (Id) @ 25°C :

2.6A 2.3A

Termination :

SMD/SMT

Pbfree Code :

yes

Terminal Finish :

Tin (Sn)

Mounting Type :

Surface Mount

Dual Supply Voltage :

20V

Base Part Number :

NTLJD3119C

Pulsed Drain Current-Max (IDM) :

18A

Series :

µCool™

Published :

2007

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

Pin Count :

6

Rise Time :

13.2ns

FET Type :

N and P-Channel

REACH SVHC :

No SVHC

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Rds On (Max) @ Id, Vgs :

65m Ω @ 3.8A, 4.5V

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 6 days ago)

Number of Pins :

6

RoHS Status :

RoHS Compliant

Turn-Off Delay Time :

13.7 ns

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

3.7nC @ 4.5V

Power Dissipation :

710mW

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Threshold Voltage :

700mV

Fall Time (Typ) :

13.2 ns

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

8V

Element Configuration :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

271pF @ 10V

Nominal Vgs :

700 mV

Transistor Element Material :

SILICON