NTLJD4150PTBG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain Current-Max (Abs) (ID) :

2.7A

DS Breakdown Voltage-Min :

30V

Number of Pins :

6

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

Operating Mode :

ENHANCEMENT MODE

HTS Code :

8541.29.00.95

FET Feature :

Logic Level Gate

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Terminal Form :

NO LEAD

Published :

2007

Pin Count :

6

Max Power Dissipation :

700mW

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

4.5nC @ 4.5V

Mount :

Surface Mount

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

135m Ω @ 4A, 10V

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

14A

Power - Max :

700mW

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

260

FET Type :

2 P-Channel (Dual)

Case Connection :

DRAIN

Package / Case :

6-WDFN Exposed Pad

RoHS Status :

RoHS Compliant

Drain-source On Resistance-Max :

0.135Ohm

Number of Terminations :

6

Drain to Source Voltage (Vdss) :

30V

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2V @ 250μA

Lead Free :

Lead Free

Terminal Finish :

Tin (Sn)

Continuous Drain Current (ID) :

1.8A

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

300pF @ 15V