NTLJD3119CTBG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

2mm

Drain to Source Breakdown Voltage :

-20V

Nominal Vgs :

700 mV

Transistor Element Material :

SILICON

Published :

2005

Drain to Source Voltage (Vdss) :

20V

Power Dissipation :

710mW

Mounting Type :

Surface Mount

Turn-Off Delay Time :

13.7 ns

Drain Current-Max (Abs) (ID) :

3.8A

Operating Temperature :

-55°C~150°C TJ

Pin Count :

6

Factory Lead Time :

9 Weeks

Vgs(th) (Max) @ Id :

1V @ 250μA

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

271pF @ 10V

Pulsed Drain Current-Max (IDM) :

18A

Number of Terminations :

6

Operating Mode :

ENHANCEMENT MODE

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Pbfree Code :

yes

FET Type :

N and P-Channel

JESD-609 Code :

e3

REACH SVHC :

No SVHC

Time@Peak Reflow Temperature-Max (s) :

40

Gate Charge (Qg) (Max) @ Vgs :

3.7nC @ 4.5V

Surface Mount :

yes

Base Part Number :

NTLJD3119C

Series :

µCool™

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

65m Ω @ 3.8A, 4.5V

Radiation Hardening :

No

FET Feature :

Logic Level Gate

Height :

750μm

Continuous Drain Current (ID) :

4.6A

Contact Plating :

Tin

Rise Time :

13.2ns

Package / Case :

6-WDFN Exposed Pad

Peak Reflow Temperature (Cel) :

260

Max Power Dissipation :

710mW

Turn On Delay Time :

5.2 ns

Threshold Voltage :

700mV

Element Configuration :

Dual

Gate to Source Voltage (Vgs) :

8V

Length :

2mm

Fall Time (Typ) :

13.2 ns

Current - Continuous Drain (Id) @ 25°C :

2.6A 2.3A

Number of Pins :

6

FET Technology :

METAL-OXIDE SEMICONDUCTOR