NTLJD2104PTBG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Surface Mount :

yes

Number of Elements :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain Current-Max (Abs) (ID) :

2.4A

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 4.5V

Case Connection :

DRAIN

Pin Count :

6

DS Breakdown Voltage-Min :

12V

Reach Compliance Code :

Unknown

FET Type :

2 P-Channel (Dual)

Power - Max :

700mW

Operating Temperature :

-55°C~150°C TJ

Qualification Status :

COMMERCIAL

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

NO LEAD

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

467pF @ 6V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Package / Case :

6-WDFN Exposed Pad

Drain to Source Voltage (Vdss) :

12V

RoHS Status :

ROHS3 Compliant

Terminal Finish :

MATTE TIN

JESD-30 Code :

S-XDSO-N6

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

2.4A

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

90m Ω @ 3A, 4.5V

Vgs(th) (Max) @ Id :

800mV @ 250μA

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Number of Terminations :

6

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

FET Feature :

Logic Level Gate

Drain-source On Resistance-Max :

0.12Ohm