NTLJD3115PT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

6.2nC @ 4.5V

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

19.8 ns

Published :

2006

Additional Feature :

LOGIC LEVEL COMPATIBLE

Factory Lead Time :

9 Weeks

Contact Plating :

Tin

Resistance :

100MOhm

Case Connection :

DRAIN

Surface Mount :

yes

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Gate to Source Voltage (Vgs) :

8V

Height :

750μm

Number of Terminations :

6

Continuous Drain Current (ID) :

3.3A

Pbfree Code :

yes

Rise Time :

15ns

Element Configuration :

Dual

Current - Continuous Drain (Id) @ 25°C :

2.3A

Lead Free :

Lead Free

FET Feature :

Logic Level Gate

Terminal Form :

C BEND

Drain to Source Breakdown Voltage :

20V

Mounting Type :

Surface Mount

Voltage - Rated DC :

-20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

NTLJD3115P

Length :

2mm

Input Capacitance (Ciss) (Max) @ Vds :

531pF @ 10V

Rds On (Max) @ Id, Vgs :

100m Ω @ 2A, 4.5V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

1.5W

Transistor Element Material :

SILICON

Width :

2mm

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Max Power Dissipation :

710mW

Vgs(th) (Max) @ Id :

1V @ 250μA

Turn On Delay Time :

6 ns

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

15 ns

FET Type :

2 P-Channel (Dual)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pin Count :

6

Current Rating :

-4.1A

Number of Elements :

2

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

6-WDFN Exposed Pad

Peak Reflow Temperature (Cel) :

260

Number of Pins :

6