NTLJD3181PZTBG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

3.2A

DS Breakdown Voltage-Min :

20V

Current - Continuous Drain (Id) @ 25°C :

2.2A

FET Feature :

Logic Level Gate

Power - Max :

710mW

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

100m Ω @ 2A, 4.5V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

JESD-30 Code :

S-PDSO-N6

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

yes

Transistor Element Material :

SILICON

Number of Terminations :

6

Number of Elements :

2

Gate Charge (Qg) (Max) @ Vgs :

7.8nC @ 4.5V

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

1V @ 250μA

Mounting Type :

Surface Mount

Package / Case :

6-WDFN Exposed Pad

Drain-source On Resistance-Max :

0.1Ohm

Pin Count :

6

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

FET Type :

2 P-Channel (Dual)

Input Capacitance (Ciss) (Max) @ Vds :

450pF @ 10V

Terminal Form :

NO LEAD

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Voltage (Vdss) :

20V

Terminal Finish :

MATTE TIN

Qualification Status :

COMMERCIAL