NTLJD2104PTAG
- Mfr.Part #
- NTLJD2104PTAG
- Manufacturer
- onsemi
- Package / Case
- 6-WDFN Exposed Pad
- Datasheet
- Download
- Description
- MOSFET 2P-CH 12V 2.4A 6WDFN
- Stock
- 15,577
- In Stock :
- 15,577
Request A Quote(RFQ)
- * Fullname:
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Power - Max :
- 700mW
- Mounting Type :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 467pF @ 6V
- Drain-source On Resistance-Max :
- 0.12Ohm
- Transistor Application :
- SWITCHING
- Pin Count :
- 6
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain to Source Voltage (Vdss) :
- 12V
- Terminal Form :
- NO LEAD
- Case Connection :
- DRAIN
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- MATTE TIN
- Qualification Status :
- COMMERCIAL
- FET Feature :
- Logic Level Gate
- Package / Case :
- 6-WDFN Exposed Pad
- DS Breakdown Voltage-Min :
- 12V
- Reach Compliance Code :
- Unknown
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 90m Ω @ 3A, 4.5V
- Number of Elements :
- 2
- Gate Charge (Qg) (Max) @ Vgs :
- 8nC @ 4.5V
- Current - Continuous Drain (Id) @ 25°C :
- 2.4A
- FET Type :
- 2 P-Channel (Dual)
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 800mV @ 250μA
- Number of Terminations :
- 6
- JESD-30 Code :
- S-XDSO-N6
- Drain Current-Max (Abs) (ID) :
- 2.4A
- Configuration :
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Surface Mount :
- yes
- JESD-609 Code :
- e3
- Datasheets
- NTLJD2104PTAG

NTLJD2104PTAG datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Rochester Electronics, LLC stock available at
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