NTJD5121NT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

60V

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Dual

Rds On (Max) @ Id, Vgs :

1.6 Ω @ 500mA, 10V

Terminal Form :

Gull wing

Lead Free :

Lead Free

Power Dissipation :

250W

Operating Temperature :

-55°C~150°C TJ

Nominal Vgs :

1.7 V

Number of Elements :

2

Rise Time :

34ns

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Height :

1mm

Package / Case :

6-TSSOP, SC-88, SOT-363

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Packaging :

Tape and Reel (TR)

Pin Count :

6

Power - Max :

250mW

Number of Pins :

6

Max Power Dissipation :

266mW

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

0.9nC @ 4.5V

Fall Time (Typ) :

32 ns

Continuous Drain Current (ID) :

295mA

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Turn-Off Delay Time :

34 ns

Additional Feature :

LOW THRESHOLD

Number of Terminations :

6

JESD-609 Code :

e3

Published :

2007

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

2 N-Channel (Dual)

Threshold Voltage :

1.7V

REACH SVHC :

No SVHC

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Width :

1.35mm

Turn On Delay Time :

22 ns

Length :

2.2mm

Drain to Source Voltage (Vdss) :

60V

FET Feature :

Logic Level Gate

Factory Lead Time :

16 Weeks

Contact Plating :

Tin

Pbfree Code :

yes

Base Part Number :

NTJD5121N

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

26pF @ 20V

Resistance :

1.6Ohm