NTJD4105CT2

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Surface Mount :

yes

Current - Continuous Drain (Id) @ 25°C :

630mA 775mA

Terminal Finish :

Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

3nC @ 4.5V

Rise Time :

23ns

Feedback Cap-Max (Crss) :

5 pF

Continuous Drain Current (ID) :

775mA

FET Feature :

Logic Level Gate

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pin Count :

6

Max Power Dissipation :

270mW

Resistance :

220mOhm

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

-8V

Current Rating :

630mA

RoHS Status :

ROHS3 Compliant

Number of Terminations :

6

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

NTJD4105C

Package / Case :

6-TSSOP, SC-88, SOT-363

Turn-Off Delay Time :

50 ns

Element Configuration :

Dual

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

FET Type :

N and P-Channel

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

36 ns

Number of Pins :

6

Drain to Source Voltage (Vdss) :

20V 8V

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

1.1A

Number of Elements :

2

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Published :

2006

Power Dissipation :

270mW

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Input Capacitance (Ciss) (Max) @ Vds :

46pF @ 20V

Rds On (Max) @ Id, Vgs :

375m Ω @ 630mA, 4.5V

Radiation Hardening :

No

Factory Lead Time :

8 Weeks

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

8V

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL