NTJD4001NT1G
- Mfr.Part #
- NTJD4001NT1G
- Manufacturer
- onsemi
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- MOSFET 2N-CH 30V 0.25A SOT-363
- Stock
- 40,850
- In Stock :
- 40,850
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Nominal Vgs :
- 1.2 V
- Rds On (Max) @ Id, Vgs :
- 1.5 Ω @ 10mA, 4V
- Operating Mode :
- ENHANCEMENT MODE
- Pin Count :
- 6
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 6
- Factory Lead Time :
- 12 Weeks
- FET Type :
- 2 N-Channel (Dual)
- Surface Mount :
- yes
- Continuous Drain Current (ID) :
- 250mA
- Voltage - Rated DC :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 1.5V @ 100μA
- Gate to Source Voltage (Vgs) :
- 20V
- Peak Reflow Temperature (Cel) :
- 260
- Lifecycle Status :
- ACTIVE (Last Updated: 22 hours ago)
- Current Rating :
- 250mA
- Contact Plating :
- Tin
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Turn On Delay Time :
- 17 ns
- Threshold Voltage :
- 1.2V
- Input Capacitance (Ciss) (Max) @ Vds :
- 33pF @ 5V
- Number of Elements :
- 2
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- FET Feature :
- Standard
- Published :
- 2007
- Pbfree Code :
- yes
- Power Dissipation :
- 272mW
- REACH SVHC :
- No SVHC
- Resistance :
- 1Ohm
- Height :
- 1mm
- Radiation Hardening :
- No
- Length :
- 2.2mm
- Max Power Dissipation :
- 272mW
- Drain to Source Breakdown Voltage :
- 30V
- Rise Time :
- 23ns
- Gate Charge (Qg) (Max) @ Vgs :
- 1.3nC @ 5V
- Element Configuration :
- Dual
- Fall Time (Typ) :
- 23 ns
- Transistor Application :
- SWITCHING
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Turn-Off Delay Time :
- 94 ns
- Width :
- 1.35mm
- Number of Pins :
- 6
- Datasheets
- NTJD4001NT1G

NTJD4001NT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
NTJD4001NT1G Description
NTJD4001NT1G MOSFET can be described as a very high voltage MOSFET that is based on planar stripe technology and DMOS technology. MOSFET NTJD4001NT1G is designed to decrease the resistance to on-state. NTJD4001NT1G ON Semiconductor is ideal for Low Side Load Switch, Li-Ion Battery Supplied Devices, Buck Converters, and Level Shifts.
NTJD4001NT1G Features
Low Gate charge for fast switching
Small footprint - 30% smaller than TSOP-6
ESD Protected Gate
RoHS Compliant
NTJD4001NT1G Applications
Low Side Load Switch
Li-Ion Battery Supplied Devices
Buck Converters
Level Shifts
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