NTJD4001NT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Lifecycle Status :

ACTIVE (Last Updated: 22 hours ago)

Time@Peak Reflow Temperature-Max (s) :

40

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

yes

Contact Plating :

Tin

REACH SVHC :

No SVHC

Radiation Hardening :

No

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Package / Case :

6-TSSOP, SC-88, SOT-363

Current Rating :

250mA

Peak Reflow Temperature (Cel) :

260

Resistance :

1Ohm

Continuous Drain Current (ID) :

250mA

FET Type :

2 N-Channel (Dual)

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

33pF @ 5V

Terminal Form :

Gull wing

Element Configuration :

Dual

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 10mA, 4V

Width :

1.35mm

Nominal Vgs :

1.2 V

Vgs(th) (Max) @ Id :

1.5V @ 100μA

Number of Pins :

6

Mounting Type :

Surface Mount

Turn-Off Delay Time :

94 ns

Transistor Element Material :

SILICON

Number of Terminations :

6

Threshold Voltage :

1.2V

Max Power Dissipation :

272mW

Pin Count :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

2.2mm

Voltage - Rated DC :

30V

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

23 ns

Gate to Source Voltage (Vgs) :

20V

FET Feature :

Standard

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

2

Factory Lead Time :

12 Weeks

Rise Time :

23ns

Turn On Delay Time :

17 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Breakdown Voltage :

30V

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

1.3nC @ 5V

Power Dissipation :

272mW

Height :

1mm

Published :

2007