NTJD4001NT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Power Dissipation :

272mW

Operating Mode :

ENHANCEMENT MODE

Length :

2.2mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate to Source Voltage (Vgs) :

20V

Lifecycle Status :

ACTIVE (Last Updated: 22 hours ago)

Drain to Source Breakdown Voltage :

30V

Operating Temperature :

-55°C~150°C TJ

FET Type :

2 N-Channel (Dual)

Element Configuration :

Dual

Rise Time :

23ns

Surface Mount :

yes

Lead Free :

Lead Free

FET Feature :

Standard

Continuous Drain Current (ID) :

250mA

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

260

Nominal Vgs :

1.2 V

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Radiation Hardening :

No

Pin Count :

6

Vgs(th) (Max) @ Id :

1.5V @ 100μA

Time@Peak Reflow Temperature-Max (s) :

40

Factory Lead Time :

12 Weeks

Number of Pins :

6

Max Power Dissipation :

272mW

Voltage - Rated DC :

30V

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

1.3nC @ 5V

Current Rating :

250mA

Contact Plating :

Tin

Resistance :

1Ohm

Published :

2007

Number of Terminations :

6

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 10mA, 4V

Threshold Voltage :

1.2V

Transistor Application :

SWITCHING

Width :

1.35mm

Fall Time (Typ) :

23 ns

Number of Elements :

2

RoHS Status :

ROHS3 Compliant

Package / Case :

6-TSSOP, SC-88, SOT-363

Turn-Off Delay Time :

94 ns

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

1mm

Input Capacitance (Ciss) (Max) @ Vds :

33pF @ 5V

Transistor Element Material :

SILICON

Turn On Delay Time :

17 ns