NTJD2152PT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Vgs(th) (Max) @ Id :

1V @ 250μA

Max Power Dissipation :

270mW

ECCN Code :

EAR99

Number of Elements :

2

Mounting Type :

Surface Mount

Turn-Off Delay Time :

50 ns

Current Rating :

-775mA

Published :

2006

Drain Current-Max (Abs) (ID) :

0.775A

Terminal Finish :

Tin (Sn)

Base Part Number :

NTJD2152P

Continuous Drain Current (ID) :

775mA

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

0.3Ohm

Element Configuration :

Dual

Lead Free :

Lead Free

Voltage - Rated DC :

-8V

Transistor Element Material :

SILICON

Feedback Cap-Max (Crss) :

40 pF

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

225pF @ 8V

Transistor Application :

SWITCHING

Fall Time (Typ) :

23 ns

Terminal Form :

Gull wing

JESD-609 Code :

e3

Package / Case :

6-TSSOP, SC-88, SOT-363

Gate to Source Voltage (Vgs) :

8V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Breakdown Voltage :

-8V

RoHS Status :

RoHS Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

4nC @ 4.5V

Rise Time :

23ns

Pin Count :

6

Number of Terminations :

6

Rds On (Max) @ Id, Vgs :

300m Ω @ 570mA, 4.5V

JESD-30 Code :

R-PDSO-G6

Power Dissipation :

270mW

Operating Mode :

ENHANCEMENT MODE

FET Feature :

Logic Level Gate

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~150°C TJ

FET Type :

2 P-Channel (Dual)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)