NTJD4105CT2G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

375m Ω @ 630mA, 4.5V

Radiation Hardening :

No

Pbfree Code :

yes

Turn-Off Delay Time :

50 ns

Feedback Cap-Max (Crss) :

5 pF

Rise Time :

23ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

Power Dissipation :

270mW

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Element Configuration :

Dual

Number of Pins :

6

Number of Terminations :

6

Input Capacitance (Ciss) (Max) @ Vds :

46pF @ 20V

Pin Count :

6

Base Part Number :

NTJD4105C

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Operating Temperature :

-55°C~150°C TJ

Published :

2006

Continuous Drain Current (ID) :

775mA

Resistance :

220mOhm

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Package / Case :

6-TSSOP, SC-88, SOT-363

Drain Current-Max (Abs) (ID) :

1.1A

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Surface Mount :

yes

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

-8V

Gate Charge (Qg) (Max) @ Vgs :

3nC @ 4.5V

Peak Reflow Temperature (Cel) :

260

Current - Continuous Drain (Id) @ 25°C :

630mA 775mA

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

20V 8V

Lead Free :

Lead Free

FET Type :

N and P-Channel

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

2

FET Feature :

Logic Level Gate

Factory Lead Time :

8 Weeks

Max Power Dissipation :

270mW

Current Rating :

630mA

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

8V

Fall Time (Typ) :

36 ns

Vgs(th) (Max) @ Id :

1.5V @ 250µA