NTJD1155LT1

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Base Part Number :

NTJD1155

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

6

Terminal Finish :

Tin (Sn)

FET Feature :

Standard

REACH SVHC :

No SVHC

Published :

2004

Number of Elements :

2

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Terminal Form :

Gull wing

Height :

1mm

Gate to Source Voltage (Vgs) :

1V

Lifecycle Status :

ACTIVE (Last Updated: 20 hours ago)

Threshold Voltage :

1V

Current Rating :

630mA

Drain to Source Breakdown Voltage :

-8V

Resistance :

130mOhm

Rds On (Max) @ Id, Vgs :

175m Ω @ 1.2A, 4.5V

Packaging :

Tape and Reel (TR)

Number of Pins :

6

FET Type :

N and P-Channel

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

1.3A

Package / Case :

6-TSSOP, SC-88, SOT-363

Power Dissipation :

400mW

Surface Mount :

yes

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

1V @ 250μA

Drain to Source Voltage (Vdss) :

8V

ECCN Code :

EAR99

Max Power Dissipation :

400mW

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Dual

Factory Lead Time :

15 Weeks

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Width :

1.35mm

Time@Peak Reflow Temperature-Max (s) :

40

Length :

2.2mm

Pin Count :

6

Mounting Type :

Surface Mount