NTJD2152PT2G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Voltage (Vdss) :

8V

Drain-source On Resistance-Max :

0.3Ohm

JESD-609 Code :

e3

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Number of Elements :

2

RoHS Status :

ROHS3 Compliant

FET Feature :

Logic Level Gate

Mounting Type :

Surface Mount

FET Type :

2 P-Channel (Dual)

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

Gate Charge (Qg) (Max) @ Vgs :

4nC @ 4.5V

Time@Peak Reflow Temperature-Max (s) :

40

Rds On (Max) @ Id, Vgs :

300m Ω @ 570mA, 4.5V

DS Breakdown Voltage-Min :

8V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Feedback Cap-Max (Crss) :

40 pF

Pin Count :

6

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

0.775A

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

MATTE TIN

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power - Max :

270mW

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

225pF @ 8V

JESD-30 Code :

R-PDSO-G6

Surface Mount :

yes

Transistor Element Material :

SILICON

Reach Compliance Code :

Unknown

Vgs(th) (Max) @ Id :

1V @ 250μA

Qualification Status :

COMMERCIAL

Current - Continuous Drain (Id) @ 25°C :

775mA

Package / Case :

6-TSSOP, SC-88, SOT-363

Number of Terminations :

6