NTJD2152PT2

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate to Source Voltage (Vgs) :

8V

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

23 ns

Max Power Dissipation :

270mW

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

225pF @ 8V

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

Non-RoHS Compliant

ECCN Code :

EAR99

Continuous Drain Current (ID) :

775mA

Qualification Status :

Not Qualified

Power Dissipation :

270mW

Rise Time :

23ns

Reach Compliance Code :

not_compliant

Number of Terminations :

6

Base Part Number :

NTJD2152P

FET Type :

2 P-Channel (Dual)

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

300m Ω @ 570mA, 4.5V

Lead Free :

Contains Lead

Peak Reflow Temperature (Cel) :

235

Current Rating :

-775mA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs(th) (Max) @ Id :

1V @ 250μA

Drain to Source Breakdown Voltage :

-8V

Drain Current-Max (Abs) (ID) :

0.775A

Terminal Finish :

Tin/Lead (Sn/Pb)

FET Feature :

Logic Level Gate

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Turn-Off Delay Time :

50 ns

Number of Elements :

2

Gate Charge (Qg) (Max) @ Vgs :

4nC @ 4.5V

Voltage - Rated DC :

-8V

Mount :

Surface Mount

Package / Case :

6-TSSOP, SC-88, SOT-363

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Dual

Pin Count :

6

JESD-609 Code :

e0

Drain-source On Resistance-Max :

0.3Ohm

Feedback Cap-Max (Crss) :

40 pF

Published :

2006

JESD-30 Code :

R-PDSO-G6