NTJD1155LT1

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Length :

2.2mm

FET Type :

N and P-Channel

Drain to Source Breakdown Voltage :

-8V

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

400mW

Pbfree Code :

yes

Number of Elements :

2

Element Configuration :

Dual

Package / Case :

6-TSSOP, SC-88, SOT-363

Gate to Source Voltage (Vgs) :

1V

REACH SVHC :

No SVHC

Height :

1mm

Pin Count :

6

Current Rating :

630mA

JESD-609 Code :

e3

Power Dissipation :

400mW

Time@Peak Reflow Temperature-Max (s) :

40

Factory Lead Time :

15 Weeks

Width :

1.35mm

Terminal Finish :

Tin (Sn)

FET Feature :

Standard

Rds On (Max) @ Id, Vgs :

175m Ω @ 1.2A, 4.5V

Vgs(th) (Max) @ Id :

1V @ 250μA

Operating Temperature :

-55°C~150°C TJ

Published :

2004

Lifecycle Status :

ACTIVE (Last Updated: 20 hours ago)

Lead Free :

Lead Free

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Resistance :

130mOhm

Terminal Form :

Gull wing

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Drain to Source Voltage (Vdss) :

8V

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

1.3A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

NTJD1155

Transistor Application :

SWITCHING

Surface Mount :

yes

Number of Pins :

6

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Threshold Voltage :

1V

Number of Terminations :

6